Title page for etd-0726112-012618


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URN etd-0726112-012618
Author Yu-Lin Hsu
Author's Email Address No Public.
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Department Materials and Optoelectronic Science
Year 2011
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title A study of microstructure and luminescence property on ZnO doped with Li2O and Al2O3
Date of Defense 2012-06-21
Page Count 73
Keyword
  • zinc oxide
  • CL
  • emission
  • defect
  • Abstract In this research, we used the zinc oxide (ZnO) which is die pressed and sintered for studying. We want to know the variations of microstructure and luminescence property when we doped 0.2 mol.% Al2O3 or Li2O to ZnO, or sintered under different atmospheres (high purity oxygen, high purity nitrogen, high purity argon). Using X-ray diffractometry (XRD), scanning electron microscope (SEM), and catholuminescence (CL) spectrometry equipped with a SEM to analyze the different samples. The all six samples’ crystal structure didn’t change via XRD. We investigated for the in-gap-level modification using the CL spectrometry. CL analysis results indicated that ZnO emitted UV light, visible light (blue, green, yellow light), and Near-infrared light emissions. The UV light emission was attributed to the two electronic transitions from the donor level of free exciton and Zn interstitial to valence band. The blue light (2.53 eV) emission was attributed to the donor level of oxygen vacancy-related defect. The green light emission was attributed to the electronic transition from the acceptor level of zinc vacancy-related defect.And the yellow light emission was attributed to the O interstitial and Li-related defects. The Near-infrared light may be attributed to the deep levels recombination.
    Advisory Committee
  • Bing-Hwai Hwang - chair
  • Ming-Horng Lin - co-chair
  • Hong-Yang Lu - advisor
  • Files
  • etd-0726112-012618.pdf
  • Indicate in-campus at 1 year and off-campus access at 1 year.
    Date of Submission 2012-07-26

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