Title page for etd-0725112-152139


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URN etd-0725112-152139
Author Sheng-Hsiung Yang
Author's Email Address No Public.
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Department Electrical Engineering
Year 2011
Semester 2
Degree Master
Type of Document
Language English
Title Fabrication and characterization of InP Schottky barrier
MOSFET with thin TiO2 gate oxide
Date of Defense 2012-07-20
Page Count 117
Keyword
  • InP
  • TiO2
  • ALD
  • Schottky barrier MOSFET
  • Abstract In this study, the thin titanium oxide (TiO2) film deposited on InP substrate was prepared by atomic layer deposition (ALD), which was used as gate oxide of InP Schottky barrier MOSFET. First, aluminum oxide (Al2O3) by ALD can be used as improvement in oxide of TiO2. Al2O3 of ALD has self-cleaning which can improve interface between oxide and substrate, the leakage current densities can reach 3.1 × 10-9 and 3.3 × 10-7 A/cm2. The Schottky barrier height(ΦBp) of Al/InP with (NH4)2S treatment is 0.968 eV, which is higher than that of Al/InP without (NH4)2S treatment (0.806eV). The (NH4)2S solution is a moderate etchant to reduce surface oxides on InP. Therefore, Schottky barrier will not be influenced by Fermi level pinning. The electrical characteristics of Schottky barrier MOSFET with TiO2 as gate oxide were measured in this report. The drain current is 1.73μA. The drain current increases rapidly when drain voltage is over 1V, it indicates that breakdown field of TiO2 thin film is not high enough. Due to advantages of ALD-Al2O3, such as self-cleaning ability and high breakdown field, the TiO2/Al2O3 prepared by ALD structure was used to improve the problem mentioned above. The electrical characteristics are much improved compared with a single TiO2 film, and drain current can reach 1.37 μA. The rapid increase of drain current with the increased drain voltage is not observed. The transconductance and mobility are 4.45 × 10-7 S/μm and 202.3 mm2/V-s, respectively, and a good sub-threshold behavior is obtained. Compared with other researches, we can find that Schottky barrier in on-state is higher than that of silicide sample. It indicates the InP Schottky barrier MOSFET characteristics are limited by high Schottky barrier.
    Advisory Committee
  • Jeng Gong - chair
  • Chen-Kin Ho - co-chair
  • Tsu-Hsin Chang - co-chair
  • Ming-Kwei Lee - advisor
  • Files
  • etd-0725112-152139.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2012-07-25

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