||The area of advanced gate dielectrics has gained considerable attention recently, and there are significant leakage current and reliability concerns for oxy-nitride in this regime. So it’s an important business to use alternate high-k dielectrics instead of oxy-nitride.|
Titanium dieoxide shows a high dielectric constant for dielectric applications. Besides, strontium can create additional oxygen vacancies that can enhance dielectric constant. In this study, we prepared SrTiO3 film by liquid phase deposition which is a novel material considered to have high dielectric constant. From several characteristic measurements, we found that SrTiO3 with exhibiting higher dielectric constant and well interface state which is very promising candidates to instead of titanium dieoxide.
The physical and chemical properties of SrTiO3 films by means of several measuring instruments, including Fourier transform infrared spectrometer (FTIR), secondary ion spectrometer (SIMS), and X-Ray diffractometer (XRD). An Al / SrTiO3 / Si metal-oxide-semiconductor (MOS) capacitor structure was used for the electrical measurements. To improve the electrical properties, we investigated the characteristics of SrTiO3 films after annealing in oxygen, nitrous oxide, and nitrogen ambient. Including the variations of thickness, structure, dielectric constant, and leakage current were discussed in this work.