Title page for etd-0724112-134636


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URN etd-0724112-134636
Author Hsueh Fu
Author's Email Address No Public.
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Department Electro-Optical Engineering
Year 2011
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title The effect of growth temperature and doping for quantum dots-in-a-well laser
Date of Defense 2012-06-26
Page Count 67
Keyword
  • Quantum dot
  • GaAs
  • P-type doping
  • MBE
  • dry etching
  • Abstract The purpose of this thesis is to fabricate 12-layer InxGa1-xAs quantum dots grown on 2-nm In0.1Ga0.9As quantum wells (DWell) laser structures grown by molecular-beam epitaxy (MBE) on GaAs substrats. We expect to optimum the lasers performance by tune the epitaxial recipe and fabrication condition. For the carrier injection efficiency, DWell structure of quantum dots grown on quantum wells is proposed to enhance the carrier capture rate. So we analyze a series of DWell structure in this work. In the epitaxial recipe, we investigate the influences of p-type doping and change the quantum wells growth temperature for the laser structures.
     In the laser fabrication, to transport the light wave in smaller dispersion loss single mode waveguide, dry etching photolithography processes are adapted in this study to fabricate 2.2mm width ridge waveguide. The as-cleaved facets are used as Fabry-Perot laser mirrors in ridge waveguide lasers. The pattern can be transferred effectively with less under-cut by dry etching compare with wet etching.
     Finally, the P-type doping DWell laser exhibits high power/facet of 24mW, slope efficiency of 0.209W/A. The maximum power/facet of PWell580 laser reach to 24mW, slope efficiency of 0.238W/A after raising the growth temperature to 580oC.
    Advisory Committee
  • Min-Hsiung Shih - chair
  • Chien-Chung Lin - co-chair
  • Jau-Sheng Wang - co-chair
  • Jui-Yang Feng - co-chair
  • Tsong-Sheng Lay - advisor
  • Files
  • etd-0724112-134636.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2012-07-24

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