Title page for etd-0724109-041248


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URN etd-0724109-041248
Author Chia-hsuan Hu
Author's Email Address No Public.
Statistics This thesis had been viewed 5350 times. Download 13 times.
Department Physics
Year 2008
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Surface characterizations of GaN nanostructure grown on γ- LiAlO_2 substrate by plasma-assisted MBE
Date of Defense 2009-06-25
Page Count 59
Keyword
  • c-plane
  • GaN
  • M-plane
  • Abstract We invistegated the characteristic of GaN nanostructure grown onγ-LiAlO2 substrate by molecular epitaxy beam. We observed the c-plane GaN pillar and M-plane GaN terraces assembled at the LiAlO2 substrate. It was found that the [0001 ‾] disk was established with the capture of N atoms by most-outside Ga atoms, while the pyramid was obtained due to the missing of most-outside N atoms. To continue, the photointensity of cathode luminescence excited from the pillar structure was one order of amplitude greater than that from M-plane.
    Advisory Committee
  • Jih-Chen Chiang - chair
  • Mitch Chou - co-chair
  • Ikai Lo - advisor
  • Files
  • etd-0724109-041248.pdf
  • indicate in-campus access in a year and off_campus not accessible
    Date of Submission 2009-07-24

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