Title page for etd-0724108-160242


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URN etd-0724108-160242
Author Ting-Huang Kuo
Author's Email Address No Public.
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Department Electrical Engineering
Year 2007
Semester 2
Degree Master
Type of Document
Language English
Title Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition
Date of Defense 2008-07-18
Page Count 107
Keyword
  • GaAs
  • ALD
  • TiO2
  • MOCVD
  • Abstract In this study, the characteristics of atomic layer deposited TiO2 films on Gallium Arsenide substrate were investigated. The physical and chemical properties were measured and surveyed. And an Al/ALD-TiO2/GaAs MOS structure was used for the electrical characterizations. For the electrical property improvements, we investigated the atomic layer deposited TiO2 films by the (NH4)2Sx treatments for GaAs substrate. The leakage currents and the hysteresis loop flatband voltage shift can be improved for ALD-TiO2 films on S-GaAs.
    Furthermore, in order to resist the leakage current from the grain boundary of the polycrystalline TiO2 films, amorphous-like structure of TiO2 thinner films are investigated. The combination of sulfur passivation and amorphous-like structure thinner films is sufficient to improve the electrical properties effectively.
    Advisory Committee
  • Gong Jeng - chair
  • Wen-Tai Lin - co-chair
  • Ying-Lang Wang - co-chair
  • Ikai Lo - co-chair
  • Ming-Kwei Lee - advisor
  • Files
  • etd-0724108-160242.pdf
  • indicate accessible in a year
    Date of Submission 2008-07-24

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