Title page for etd-0723118-132635


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URN etd-0723118-132635
Author Che-Yu Chang
Author's Email Address No Public.
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Department Physics
Year 2017
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title The carrier recombination of InAs/GaAs quantum dots
Date of Defense 2018-07-18
Page Count 82
Keyword
  • Time-Resolved Photoluminescence
  • InAs
  • Quantum dot
  • Lifetime
  • Photoluminescence
  • Abstract The purpose of this study is to examine the energy released due to excitation and recombination of single-layered and multi-layered InAs/GaAs quantum dots samples at different conditions. The temperature-dependence and power-dependence photoluminescence and time-resolved photoluminescence for the lifetime of the carriers were measured. In addition, the difference between InAs/GaAs single-layer and multi-layer quantum dots were discussed. At 14K, the peak energy was found to be 1.236eV and the highest lifetime was 2.36ns for InAs/GaAs single-layer ground state, 1.234eV and 1.24ns for InAs/GaAs three-layers quantum dots, and 1.278eV and 1.60ns for InAs/ GaAs eight-layers quantum dots.
    Advisory Committee
  • Meng-En Lee - chair
  • Li-Wei Tu - co-chair
  • Der-Jun Jang - advisor
  • Files
  • etd-0723118-132635.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2018-08-23

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