Title page for etd-0722111-103157


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URN etd-0722111-103157
Author Shu-wei Hsu
Author's Email Address m982030031@student.nsysu.edu.tw
Statistics This thesis had been viewed 5385 times. Download 1933 times.
Department Physics
Year 2010
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Scanning tunneling microscopy and spectroscopy of the electronic structure of Mn δ-doped GaN films grown by molecular beam epitaxy
Date of Defense 2011-07-04
Page Count 51
Keyword
  • scanning tunneling microscopy
  • acceptor level
  • Mn δ-doped GaN films
  • scanning tunneling spectroscopy
  • Abstract The electronic structures of Mn δ-doped epitaxial GaN films grown on sapphire substrates are studied by scanning tunneling microscopy in this work. Local structural information and the corresponding electronic properties of Mn δ-doped GaN films are probed by the combination of scanning tunneling microscopy and atomic-scale scanning tunneling spectroscopy measurements. According to the electronic local density of states analysis indicates that Mn ions develop an acceptor level in GaN, revealing a gap state located at ~ 1.4 eV above the valence band edge of GaN. Furthermore, the energy position of the charge transfer levels of substitutional MnGa within GaN energy gap is also elucidated and discussed in the work.
    Advisory Committee
  • Chia-Seng Chang - chair
  • Li-wei Tu - co-chair
  • Chun-wei Chen - co-chair
  • Ya-ping Chiu - advisor
  • Files
  • etd-0722111-103157.pdf
  • indicate accessible in a year
    Date of Submission 2011-07-22

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