Title page for etd-0720106-002050


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URN etd-0720106-002050
Author Zhi-jie Chang
Author's Email Address m932030025@student.nsysu.edu.tw
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Department Physics
Year 2005
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Transport Studies in AlxGa1-xN/GaN Quantum Well at Low Temperature and High Magnetic Field
Date of Defense 2006-07-11
Page Count 96
Keyword
  • SdH
  • GaN
  • 2DEG
  • AlGaN
  • Hall
  • Abstract We have studied the electronic properties of AlxGa1-xN/GaN heterostructures by using Shubnikov–de Haas(SdH) measurement. Two SdH oscillations were detected on the sample of x=0.31, due to the population of the first two subbands with the energy separations of 94.2 meV. For the samples of x=0.22 and x=0.23, two SdH oscillations beat each other, probably due to a finite zero-field spin splitting. The spin-splitting energies are equal to 1.4~5.3 and 4.5 meV . The samples also showed a persistent photoconductivity effect after illuminating by blue light-emitting diode.
    Advisory Committee
  • Jih-Chen Chiang - chair
  • Ming-Kwei Lee - co-chair
  • Ikai Lo - advisor
  • Files
  • etd-0720106-002050.pdf
  • indicate access worldwide
    Date of Submission 2006-07-20

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