Title page for etd-0718114-105515


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URN etd-0718114-105515
Author Tzu-hsien Tang
Author's Email Address No Public.
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Department Electrical Engineering
Year 2013
Semester 2
Degree Master
Type of Document
Language English
Title Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier
Date of Defense 2014-07-25
Page Count 125
Keyword
  • InP
  • TiO2
  • asymmetrical Schottky barrier MOSFET
  • ALD
  • Abstract In this study, the thin titanium oxide (TiO2) film and aluminum oxide (Al2O3) films which was used as gate oxides of InP asytmmetrical Schottky barrier MOSFET were deposited on InP substrate that was prepared by atomic layer deposition (ALD). First, in order to having good quality of interface, the (NH4)2S solution is a good method to reduce surface native oxide on InP. The Al/InP Schottky diode’s Schottky barrier height (ΦBp) is 0.341 eV without sulfur treatment. The Al/InP Schottky barrier height is promoted to 0.538 eV after sulfur treatment. Therefore, Schottky barrier will not be influenced by Fermi level pinning with fewer native oxide. we made of improvement quality for existing titanium oxides, using double stack of titanium oxide (TiO2) and aluminum oxide (Al2O3) by ALD can be used to improve single layer of TiO2. Al2O3 of ALD has self-cleaning which could improve interface quality between oxide and substrate, the leakage current densities can reach 2.48 × 10-5 and 8.08 × 10-3 reduce to 1.49 × 10-8 和 2.03 × 10-6 A/cm2 at ± 2 MV/cm. Besides, in order to reduce leakage current from the short channel effects which are caused by device scaled. We used Schottky contact which has ultra shallow junction depth. The contact resistance of Al/InP is 2.1 × 109 Ω after InP with sulfur treatment. So, we investigate three structures of Schottky tunneling barrier diodes in inserting dielectrics as source/drain regions. From my experiments can be found the double layers of Al2O3/TiO2 has the highest current at reverse bias in these three structures. This Schottky tunneling barrier structure used in Schottky tunneling barrier MOSFET source and drain regions which can promote saturation current.But the leakage current increase which is caused by reduction of Schottky barrier height at off-state. In order to reduce leakage current we only used Schottky tunneling barrier structure in source region. Therefore, the drain region with high Schottky barrier height can reduce leakage current at off-state and it has similar saturation current to Schottky tunneling barrier MOSFET. Therefore, the ION/IOFF ratio is reach 105.
    Advisory Committee
  • Wen-Tai Lin - chair
  • Chung-Cheng Chang - co-chair
  • I-kai Lo - co-chair
  • Ming-Kwei Lee - advisor
  • Ying-Chung Chen - advisor
  • Files
  • etd-0718114-105515.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2014-08-18

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