Title page for etd-0716116-221632


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URN etd-0716116-221632
Author Pei-jou Lee
Author's Email Address No Public.
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Department Electrical Engineering
Year 2015
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Fabrication of NiCrSi and NiCr thin film resistors with low TCR values
Date of Defense 2016-07-14
Page Count 107
Keyword
  • NiCr
  • NiCrSi
  • thin film resistors
  • Al2O3 substrate
  • temperature coefficient of resistance
  • Abstract In this study, thin film resistors with low temperature coefficient of resistance (TCR) were fabricated. NiCr (80 wt% Ni , 20 wt% Cr), NiCrSi (55 wt% Ni , 40 wt% Cr , 5 wt% Si) and NiCrSi (5 wt% Ni , 20 wt% Cr , 75 wt% Si) were used as targets and the RF magnetron sputtering method was used to deposit thin films on Al2O3 substrates. Thin films were fabricated by different sputtering parameters, including sputtering power, working pressure, annealing temperature and the influences on the physical and electrical properties of thin film resistors were investigated. The field-effect scanning electronic microscope observations showed that amorphous structure were revealed on the surfaces of the NiCr and NiCrSi thin films. Energy dispersive spectrometer was used to analysis elements of thin films. Finally, resistance of thin films were measured and sheet resistance, resistivity and TCR could be calculated.
    The results in this study showed that NiCrSi(55 wt% Ni , 40 wt% Cr , 5 wt% Si) was the best composition for thin film resistors, in which the resistivity was raised and the TCR value was reduced through the process of annealing. The sheet resistance was 52.270 Ω/sq., resistivity was 508.062 μΩ-cm and the TCR value was -2.312 PPM/℃.
    Advisory Committee
  • Shou-ching Chang - chair
  • Cheng-fu Yang - co-chair
  • Mau-phon Houng - co-chair
  • Yeong-her Wang - co-chair
  • Ying-chung Cheng - advisor
  • Files
  • etd-0716116-221632.pdf
  • Indicate in-campus at 5 year and off-campus access at 5 year.
    Date of Submission 2016-08-26

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