Title page for etd-0714117-182142


[Back to Results | New Search]

URN etd-0714117-182142
Author Chia-yu Chang
Author's Email Address No Public.
Statistics This thesis had been viewed 5385 times. Download 0 times.
Department Physics
Year 2016
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Optical Characteristics of InGaN Solar Cell Structural Materials
Date of Defense 2017-06-29
Page Count 87
Keyword
  • nanostructure
  • plasma-assisted molecular beam epitaxy
  • InGaN
  • solar cells structures
  • nanorods
  • Abstract In this thesis we study the physical properties of gallium nitride (GaN) nanorods and InGaN thin films. These samples were grown by plasma assisted molecular beam epitaxy (PAMBE) on c-plane GaN templates. Two types of samples were grown. The first set of samples were n-i-p GaN nanorods (NR) GaN templates fabricated using a predefined template. The second type of samples were epitaxial thin films of InGaN and InN grown on GaN templates.
    The surface morphology of these samples was characterized by scanning electron microscopy (SEM) and structure and indium content was verified using two methods. The first method was by high resolution x-ray diffraction (HRXRD) to identify the various crystalline phases, while photoluminescence (PL) and cathodoluminescence (CL) spectroscopies were used to measure the optical band gap.
    From our result we find that by optimizing the plasma etching conditions, and improving the Mg doping parameter, n-i-p nanorods can be obtained. In case of the epitaxial thin films, we observe that high indium content can be incorporated by optimizing the growth temperatures.
    Advisory Committee
  • Der-Jun Jang - chair
  • Sung-wei Yeh - co-chair
  • Yung-Sung Chen - co-chair
  • Li-Wei Tu - advisor
  • Files
  • etd-0714117-182142.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2017-09-11

    [Back to Results | New Search]


    Browse | Search All Available ETDs

    If you have more questions or technical problems, please contact eThesys