||Ga1-xMnxN has been considered to be one of the candidates for diluted magnetic semiconductors (DMS). In this thesis, we study the properties of epitaxial Ga1-xMnxN thin films grown on nonpolar m-plane GaN templates by plasma-assisted molecular beam epitaxy (PAMBE). The Mn contents in Ga1-xMnxN were varied by shutter control. The purpose is to inhibit the formation of secondary phase in diluted magnetic semiconductors. Samples were characterized and analyzed by scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence (PL), high resolution x-ray diffraction (HRXRD), x-ray absorption spectroscopy (XAS), x-ray photoelectron spectroscopy (XPS), and superconducting quantum interference device (SQUID) magnetometry.|
SEM images show the surface morphology of the samples. The Raman scattering indicate the Mn atoms successfully substitute Ga sites. Nonpolar m-plane GaN:Mn thin films have the anisotropic optical properties are investigated using PL. The crystal orientation is m-axis, without secondary phase inclusions were confirmed through HRXRD. The concentration of Mn atoms are 2%~15% and the configuration of Mn ions are Mn+2、Mn+3 was determined by XPS and XAS. Finally, above room temperature ferromagnetism of Ga1-xMnxN thin films is observed by magnetization measurement of SQUID.