Title page for etd-0714113-180302


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URN etd-0714113-180302
Author Chen-Yu Lin
Author's Email Address xup65p4m4@yahoo.com.tw
Statistics This thesis had been viewed 5353 times. Download 224 times.
Department Physics
Year 2012
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Fabrication Improvements and Analyses of m-GaN Light Emitting Diodes
Date of Defense 2013-06-24
Page Count 101
Keyword
  • m-plane sapphire
  • nonpolar
  • InGaN
  • light emitting diodes
  • Abstract M-plane GaN on the m-sapphire grown by plasma assisted molecular beam epitaxy (PAMBE) have been achieved. Ⅴ/Ⅲ ratio and growth temperature are the most important factors in the growth sequence.
    The surface of m-plane GaN was treated by (NH4)2S and annealing for ohmic contact condition. The specific contact resistance of m-plane p-GaN was calculated by TLM model. Furthermore, the anisotropic characteristic of p-GaN mobility was obtained by hall bar measurement.
    M-plane GaN based light-emitting diode was also fabricated through the photolithography process. The surface treatment effects was also discussed.
    Advisory Committee
  • Quark Chen - chair
  • Wei-Feng Tsai - co-chair
  • Den -Jun Jang - co-chair
  • Shih-Wei Feng - co-chair
  • Li-Wei Tu - advisor
  • Files
  • etd-0714113-180302.pdf
  • Indicate in-campus at 5 year and off-campus access at 5 year.
    Date of Submission 2013-08-14

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