|Author's Email Address
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|Type of Document
||Fabrication Improvements and Analyses of m-GaN Light Emitting Diodes|
|Date of Defense
light emitting diodes
||M-plane GaN on the m-sapphire grown by plasma assisted molecular beam epitaxy (PAMBE) have been achieved. Ⅴ/Ⅲ ratio and growth temperature are the most important factors in the growth sequence.|
The surface of m-plane GaN was treated by (NH4)2S and annealing for ohmic contact condition. The specific contact resistance of m-plane p-GaN was calculated by TLM model. Furthermore, the anisotropic characteristic of p-GaN mobility was obtained by hall bar measurement.
M-plane GaN based light-emitting diode was also fabricated through the photolithography process. The surface treatment effects was also discussed.
||Quark Chen - chair|
Wei-Feng Tsai - co-chair
Den -Jun Jang - co-chair
Shih-Wei Feng - co-chair
Li-Wei Tu - advisor
Indicate in-campus at 5 year and off-campus access at 5 year.|
|Date of Submission