| URN |
etd-0714112-162455 |
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| Author |
Jyun-Hao Lou |
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| Author's Email Address |
m992030036@student.nsysu.edu.tw |
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| Statistics |
This thesis had been viewed 5590 times. Download 320 times. |
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| Department |
Physics |
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| Year |
2011 |
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| Semester |
2 |
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| Degree |
Master |
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| Type of Document |
|
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| Language |
English |
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| Title |
Study of Resistance Switching Physical Mechanism in
Hafnium Oxide Thin Film for Resistive Random Access Memory |
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| Date of Defense |
2012-06-18 |
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| Page Count |
141 |
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| Keyword |
Non-volatile memory (NVM)
RRAM
Hafnium oxide
Carrier transport mechanism
Resistance switching
|
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| Abstract |
This study is focuses on the resistance switching physical mechanism in hafnium oxide (HfO2) of resistive random access memory (RRAM). HfO2 was taken as the resistance switching layer because HfO2 is extremely compatible with the prevalent complementary metal oxide semiconductor (CMOS) process. The detail physical mechanism is studied by the stable RRAM device (Ti/HfO2/TiN), which is offered from Industrial Technology Research Institute (ITRI). In this study, the resistance switching property of two different forming conductions are compared, including DC sweeping forming and AC pulse forming. In general, forming is a pivotal process in resistance
random access memory (RRAM) to activate the resistance switching behavior. However, over forming would lead to device damage. The overshoot current has been considered as a degradation reason during the forming process. The circuit design is used to obtain the overshoot effect of DC sweeping forming by oscilloscope and semiconductor parameter analyzer system. The quantity of charge through the switching layer has been proven as the key element in the formation of the conduction path. Ultra-fast pulse
forming can form a discontinuous conduction path to reduce the operation power. |
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| Advisory Committee |
Simon M. Sze - chair
Zhen-Ming Wu - co-chair
Ann-Kuo Chu - co-chair
Dershin Gan - co-chair
Ting-Chang Chang - advisor
|
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| Files |
Indicate in-campus at 5 year and off-campus access at 5 year. |
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| Date of Submission |
2012-07-14 |
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