Title page for etd-0714112-162455


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URN etd-0714112-162455
Author Jyun-Hao Lou
Author's Email Address m992030036@student.nsysu.edu.tw
Statistics This thesis had been viewed 5590 times. Download 320 times.
Department Physics
Year 2011
Semester 2
Degree Master
Type of Document
Language English
Title Study of Resistance Switching Physical Mechanism in
Hafnium Oxide Thin Film for Resistive Random Access Memory
Date of Defense 2012-06-18
Page Count 141
Keyword
  • Non-volatile memory (NVM)
  • RRAM
  • Hafnium oxide
  • Carrier transport mechanism
  • Resistance switching
  • Abstract This study is focuses on the resistance switching physical mechanism in hafnium oxide (HfO2) of resistive random access memory (RRAM). HfO2 was taken as the resistance switching layer because HfO2 is extremely compatible with the prevalent complementary metal oxide semiconductor (CMOS) process. The detail physical mechanism is studied by the stable RRAM device (Ti/HfO2/TiN), which is offered from Industrial Technology Research Institute (ITRI). In this study, the resistance switching property of two different forming conductions are compared, including DC sweeping forming and AC pulse forming. In general, forming is a pivotal process in resistance
    random access memory (RRAM) to activate the resistance switching behavior. However, over forming would lead to device damage. The overshoot current has been considered as a degradation reason during the forming process. The circuit design is used to obtain the overshoot effect of DC sweeping forming by oscilloscope and semiconductor parameter analyzer system. The quantity of charge through the switching layer has been proven as the key element in the formation of the conduction path. Ultra-fast pulse
    forming can form a discontinuous conduction path to reduce the operation power.
    Advisory Committee
  • Simon M. Sze - chair
  • Zhen-Ming Wu - co-chair
  • Ann-Kuo Chu - co-chair
  • Dershin Gan - co-chair
  • Ting-Chang Chang - advisor
  • Files
  • etd-0714112-162455.pdf
  • Indicate in-campus at 5 year and off-campus access at 5 year.
    Date of Submission 2012-07-14

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