Title page for etd-0714111-132055


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URN etd-0714111-132055
Author Min-Chen Chen
Author's Email Address No Public.
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Department Physics
Year 2010
Semester 2
Degree Ph.D.
Type of Document
Language English
Title Study on the Fabrication and Electrical Characteristics of the Advanced Metal-oxide-based Resistive Random Access Memory and Thin-Film Transistors Devices
Date of Defense 2011-07-03
Page Count 141
Keyword
  • Thin-Film Transistors (TFTs)
  • Oxide thin film
  • Resistive Random Access Memory (RRAM)
  • Abstract In first part, the supercritical CO2 (SCCO2) fluid technology is employed to improve the device properties of ZnO TFT. The SCCO2 fluid exhibits liquid-like property, which has excellent transport ability. Furthermore, the SCCO2 fluid has gas-like and high-pressure properties to diffuse into the nanoscale structures without damage. Hence, the SCCO2 fluid can carry the H2O molecule effectively into the ZnO films at low temperature and passivate traps by H2O molecule at low temperature. The experimental results show that the on current, sub-threshold slope, and threshold voltage of the device were improved significantly.
    Next, the electrical degradation behaviors and mechanisms under drain bias stress of a-IGZO TFTs were investigated. A current crowding effect and an obvious capacitance-voltage stretch-out were observed after stress. During the drain-bias stress, the oxygen would be absorbed on the back channel near the drain region of IGZO film. Therefore, the carrier transport is impeded by the additional energy barrier near drain region induced by the adsorbed oxygen, which forms a depletion layer to generate the parasitism resistance.
    We also investigated the RRAM device based on IGZO film, and proposed the related physical mechanism models. The IGZO RRAM will be very promising for integration with IGZO TFTs for advanced system-on-panel display applications to be a transparent embedded system. In this part, the transparent RRAM device with ITO/IGZO/ITO structure was fabricated. The proposed device presents an excellent bipolar resistive switching characteristic and good reliability. The bipolar switching mechanism of our device is dominated by the formation and rupture of the oxygen vacancies in a conduction path.
    The influence of electrode material on resistance switching characteristic is investigated through Pt/IGZO/TiN and Ti/IGZO/TiN structure. As the bias applied on the Ti or TiN, the Ti or TiN electrode can play the role of oxygen reservoir to absorb/discharge oxygen ions. Therefore, the device presents a bipolar resistive switching characteristic. However, as the bias applied on the Pt electrode, the device presents a unipolar resistive switching characteristic. Because the Pt electrode can’t store the oxygen ion, the device should use the joule heating mode to rupture the conduction path and present the unipolar resistive switching characteristic.
    Finally, the resistive switching properties of IGZO film deposited at different oxygen content were investigated, since the resistance switching behaviors are related to the formation and rupture of filaments composed of oxygen vacancies in the IGZO matrix. Experiment results show that the HRS current decreases when the oxygen partial pressure gradually increases. Based on the XPS analysis, these phenomena are related to the non-lattice oxygen concentration. With increasing oxygen ratio, the filaments will rupture completely through the abundant non-lattice oxygen inducing oxidation, which leads to HRS current decrease and an increase in the memory window.
    Advisory Committee
  • Ying-Lang,Wang - chair
  • Tsung-Ming Tsai - co-chair
  • Ying-Chung Chen - co-chair
  • Jen-Sue Chen - co-chair
  • Ting-Chang Chang - advisor
  • Files
  • etd-0714111-132055.pdf
  • indicate in-campus access in a year and off_campus not accessible
    Date of Submission 2011-07-14

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