Title page for etd-0713113-125128


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URN etd-0713113-125128
Author Shih-Yu Chang
Author's Email Address No Public.
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Department Materials and Optoelectronic Science
Year 2012
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Study of ZnO epitaxial growth on the nitridated LiGaO2 substrate by chemical vaper deposition
Date of Defense 2013-06-26
Page Count 105
Keyword
  • CVD
  • nitridation
  • ZnO
  • epitaxy
  • nonpola
  • Abstract In this study, the level of tubular furnaces for chemical vapor deposition (Chemical Vapor Deposition, CVD), mainly to improve after LiGaO2 (A-LiGaO2) as the substrate for Zinc 2,4-pentanedionate monohydrate [Zn (C5H7O2) 2. H2O] as zinc precursor (precursor), with nitrogen as the carrier gas (carrier gas), leads to oxygen as a reactive gas, epitaxial growth of zinc oxide (Zinc Oxide, ZnO).
       The first step of this study, the LGO (100) a porous substrate, the first gallium nitride (GaN), by chemical vapor deposition method, the ammonia (NH3) on the substrate surface is nitrided.
       The study found that LGO nitride substrate 800 degrees Celsius when the reaction starts, but 950 degrees Celsius when the nitride crystal substrate LGO out better quality, so as to avoid premature nitriding process pass into ammonia, which leads to in the more suitable substrate surface temperature nitriding reaction, the reaction temperature reached before the first nitrogen gas (N2), to prevent the suitable temperature nitriding, also prevent the substrate at high temperatures under low pressure LGO prone to cracking. Through this method to change, a significant improvement in the quality of LGO crystal nitride substrate.
       In this study, a second step, by chemical vapor deposition epitaxy ZnO (10-10) film, review of the literature that an M-plane and C-plane ZnO grown mainly determined by the temperature control parameters, therefore, the growth of ZnO film of logic , first find the M-plane ZnO thin films suitable for growing temperature, temperature gradient using the reactor core area smallest first positional parameter settings will be deposited directly above the reactor core, to find a suitable M-plane growth temperature. By SEM and XRD analysis result, the temperature of the reactor core 750 degrees Celsius, SEM observed M-plane and C side surface morphology of ZnO. Diffraction peak FWHM measured as 0.609, the smaller temperature gradient through the reactor core Confirm M-plane growth temperature parameters, first by changing the epitaxial film growth temperature, zinc precursor, oxygen and nitrogen flow, the control tube temperature, via the surface morphology, crystal quality, optical properties and electrical analysis to explore zinc oxide thin film growth mechanism into the mix and, thereby improving the chemical vapor deposition process conditions, looking forward to a low lattice mismatch with the substrate to achieve high crystal quality, excellent luminescence properties, and good conductivity, and low defect density semiconductor element.
    Advisory Committee
  • Der- shin Gan - chair
  • Ji-jen Wu - co-chair
  • Liu-wen Chang - co-chair
  • Ming-Chi Chou - advisor
  • Files
  • etd-0713113-125128.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2013-08-13

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