Title page for etd-0712111-151511


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URN etd-0712111-151511
Author Chen-chi Yang
Author's Email Address No Public.
Statistics This thesis had been viewed 5348 times. Download 2447 times.
Department Physics
Year 2010
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Characterization and growth of InGaN on ZnO(0001) substrate by Plasma-Assisted Molecular Beam Epitaxy
Date of Defense 2011-07-01
Page Count 60
Keyword
  • InGaN
  • Molecular Beam Epitaxy
  • ZnO
  • period shutter control method
  • single content
  • Abstract This article describes that we grew InGaN ternary films by Plasma- Assisted Molecular Beam Epitaxy (PAMBE) on the ZnO substrate O-polar (0001) surface. Before we grew the films, we grew the InN films on the ZnO substrate to find out the interface reaction conditions.
     We used Double Crystal X-ray Diffraction (XRD) to analyze the diffraction peak of InGaN films after we grew them. We found it was very hard to grow the single content InGaN films by generally methods. We tried period shutter control method to grow films, and we succeeded to grow the single phase films.
     We analyzed the morphologies by AFM and SEM, the microstructures by TEM, the electric properties by Hall measurement, and the fluorescent characteristics by PL.
    Advisory Committee
  • M. K. Lee - chair
  • Mitch M.C. Chou - co-chair
  • Ikai Lo - advisor
  • Files
  • etd-0712111-151511.pdf
  • indicate in-campus access immediately and off_campus access in a year
    Date of Submission 2011-07-12

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