Title page for etd-0708116-115616


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URN etd-0708116-115616
Author Jing Ji
Author's Email Address No Public.
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Department Electrical Engineering
Year 2015
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Impacts of Oxygen Plasma Surface Treatment on Performance and Reliability of N-type Poly-Si Thin-Film Transistors With TiN/HfO2 Gate Stack
Date of Defense 2016-07-15
Page Count 62
Keyword
  • O2 plasma surface treatment
  • poly-Si TFTs
  • high-k gate dielectric
  • short channel effect
  • reliability
  • Abstract The application of polysilicon thin-film transistors in active matrix liquid crystal displays has been the main driver of the development of polysilicon thin-film transistors technology. The conventional poly-Si TFTs with SiO2 gate dielectric has been scaling down to meet the requirements of high performance, but hard to achieve this goal.
    Using high-κ materials as gate dielectric layer can improve gate capacitance density and induce more carriers to enhance the device characteristics. Among the high-κ materials, HfO2 is a promising alternative to be the gate dielectric. On the other side, there could be defects in the grain boundary of poly-Si channel film, which would capture carriers to form potential barrier and affect device performance. Oxygen plasma surface treatment is capable of passivating these defects and improving the gate dielectric/poly-Si interface quality.
    In this paper, impacts of oxygen plasma surface treatment on performance and reliability of n-type poly-Si thin-film transistors with TiN/HfO2 gate stack have been researched:
    To study the impact of oxygen plasma surface treatment on performance of n-type poly-Si thin-film transistors with TiN/HfO2 gate stack, measurements of the transfer characteristics and output characteristics have been performed on HfO2 poly-Si N-type TFTs of various channel length without and with O2 plasma surface treatment at room temperature. Enhancement of device performance has been observed through all the channel length of 20μm, 10μm, 5μm, 2μm and 1μm with O2 plasma surface treatment.
    To study the impact of oxygen plasma surface treatment on reliability of n-type poly-Si thin-film transistors with TiN/HfO2 gate stack, measurements of the transfer characteristics and output characteristics have been performed on HfO2 poly-Si N-type TFTs of W/L = 100m/10m without and with O2 plasma surface treatment at the temperature of 125℃, the PBTI stress condition being set as VOC = VG-VTH = 5V, 6V, 7V. The PBTI degradation characteristics have been observed, while the O2 plasma surface treatment has reduced the degradation and enhanced the device reliability.
    Advisory Committee
  • Kuo-Hsing Kao - chair
  • Yao-Jen Lee - co-chair
  • Feng-Renn Juang - co-chair
  • Kuo-Chung Hsu - co-chair
  • Cheng-Yu Ma - advisor
  • Files
  • etd-0708116-115616.pdf
  • Indicate in-campus at 5 year and off-campus access at 5 year.
    Date of Submission 2016-08-08

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