Title page for etd-0706115-135844


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URN etd-0706115-135844
Author Chi-kuan Lin
Author's Email Address lckuang0224@gmilc.com
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Department Electrical Engineering
Year 2014
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Fabrication and characteristics of thin film bulk acoustic resonator device using double piezoelectric layers
Date of Defense 2015-07-27
Page Count 108
Keyword
  • Dual piezoelectric layers
  • TFBAR
  • ZnO
  • AlN
  • Etch
  • Abstract In this study, using the structure of dual piezoelectric layers:ZnO/AlN to fabricate the thin film bulk acoustic resonator (TFBAR).First seeding layer-titanium (Ti) and bottom electrode-platinum (Pt) were deposited by DC sputtering of a dual gun system.And then The piezoelectric thin films:AlN thin films and ZnO thin films were deposited by the RF reactive magnetron sputtering.To define the best parameters of the growth of piezoelectric AlN thin films and piezoelectric ZnO thin films using the X-ray diffraction and scanning electron microscopy.Finally, the dual piezoelectric layers thin film bulk acoustic resonator (TFBAR) were fabricated by using the photolithographymethod to define the electrode and two-step ecth.
    The result shows that AlN thin films can promote the acoustic velocity to promote the resonance frequency.The resonance frequency of tthin film bulk acoustic resonator (TFBAR) is 3.04GHz.Finally,by the method of reduce loss,the resonance frequency can be promoted to 3.04GHz.
    Advisory Committee
  • Yeong-Her Wang - chair
  • Meng-Chyi Wu - co-chair
  • Sheng-Yuan Chu - co-chair
  • Chien-Jung Huang - co-chair
  • Ying-Chung Chen - advisor
  • Files
  • etd-0706115-135844.pdf
  • Indicate in-campus at 5 year and off-campus access at 5 year.
    Date of Submission 2015-08-06

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