| Abstract |
In this thesis, the c-axis-oriented AlN films were deposited on piezoelectric substrates, lithium niobate (LiNbO3), ST-Quartz, and non-piezoelectric substrate, silicon (Si), by reactive rf magnetron sputtering. AlN films were deposited with the nitrogen concentration (N2/Ar+N2) of 20∼80%, the chamber pressure of 1∼15mTorr, the rf power of 200∼450W, the deposition time of 1~3 hours and the substrate temperature of 100∼400℃.
The correlation between growth parameters and piezoelectric coefficients will be investigated by XRD、d33 and K2 analysis in this study. The experimental results showed that the values of d33 become larger as the intensity of X-ray is stronger. It can also be concluded that the smaller the FWHM of (002) XRD peak is, the larger the value of d33 is. With various sputtering parameters, the K2 values exhibit diversely. The multilayer structures of AlN/LiNbO3 and AlN/ST-Quartz both make lower values of K2.
In general, by combining the higher K2 and d33 values of LiNbO3 and ST-Quartz with high wave velocity of AlN, the high-frequency with high performance SAW devices can be obtained. |
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