Title page for etd-0706104-140927


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URN etd-0706104-140927
Author Ming-Horng Gau
Author's Email Address m9123610@student.nsysu.edu.tw
Statistics This thesis had been viewed 5351 times. Download 5621 times.
Department Physics
Year 2003
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Growth and characterization of AlGaN/GaN heterostructures
Date of Defense 2004-06-25
Page Count 62
Keyword
  • GaN
  • MBE
  • AlGaN
  • Abstract We will discuss the growth and characterization of AlxGa1-xN/GaN on sapphire substrate by plasma-assisted molecular beam epitaxy. By performing the X-ray diffraction (XRD) of our sample, we could control the fraction of Aluminum in about 0%, 16%, and 31% with varying the equivalent pressure of Aluminum. Under the investigation of field emission scanning electron microscopy (FESEM) and reflection high energy electron diffraction (RHEED) pattern, we can determinate the samples are N-polarity. The photoluminescence (PL) spectra show the bowing coefficient of AlGaN is about 1.38 eV. Furthermore, The Hall mobility could be improved from 8.2 cm2/Vs to 453 cm2/Vs or 796 cm2/Vs at room temperature or liquid nitrogen temperature respectively, after changing the structure of AlxGa1-xN, such as fraction of Aluminum, the thickness of i-AlxGa1-xN and n-AlxGa1-xN, and cap layer.
    Advisory Committee
  • Li-Wei Tu - chair
  • Yan-Ten Lu - co-chair
  • Ikai Lo - advisor
  • Files
  • etd-0706104-140927.pdf
  • indicate in-campus access immediately and off_campus access in a year
    Date of Submission 2004-07-06

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