|Author's Email Address
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|Type of Document
||Investigation of the Optical Properties of Semiconductor Quantum Structures|
|Date of Defense
||quantum well intermixing
In this thesis, we have setup a photoluminescence (PL) measurement system to investigate the quantum well intermixing (QWI) effects on semiconductor multiple quantum-well (MQW) structures. The measured samples include 1.3mm and 1.55mm InGaAsP MQW laser structures grown by MOCVD, and 1.55mm InGaAlAs MQW structures by MBE.
The QWI process was performed by rapid thermal annealing at
600℃~800℃ in 1 min with a ~1300Å SiO2 layer sputtered on the semiconductor surface. Following the SiO2 sputtering and thermal annealing, room-temperature PL measurements were used to study the QWI effect. The result shows that the PL intensity is reduced for the MOCVD samples, while the MBE samples have up to 47 times increase of PL intensity. After QWI process, all the samples have a blue-shift in PL spectra. The 1.55mm InGaAsP laser structures by MOCVD have a maximum blue-shift of 34nm, and the MBE samples of 12nm after 800℃ annealing.
||Shoou-Jinn Chang - chair|
Wen-Jeng Ho - co-chair
Tao-Yuan Chang - co-chair
Jung-Tsung Hsu - co-chair
Tsong-Sheng Lay - advisor
indicate in-campus access in a year and off_campus not accessible|
|Date of Submission