Title page for etd-0705102-202025


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URN etd-0705102-202025
Author Chun-Hsiu Shih
Author's Email Address No Public.
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Department Electro-Optical Engineering
Year 2001
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Investigation of the Optical Properties of Semiconductor Quantum Structures
Date of Defense 2002-06-27
Page Count 75
Keyword
  • quantum well intermixing
  • photoluminescence
  • Abstract Abstract
      In this thesis, we have setup a photoluminescence (PL) measurement system to investigate the quantum well intermixing (QWI) effects on semiconductor multiple quantum-well (MQW) structures. The measured samples include 1.3mm and 1.55mm InGaAsP MQW laser structures grown by MOCVD, and 1.55mm InGaAlAs MQW structures by MBE.
      The QWI process was performed by rapid thermal annealing at
    600℃~800℃ in 1 min with a ~1300Å SiO2 layer sputtered on the semiconductor surface. Following the SiO2 sputtering and thermal annealing, room-temperature PL measurements were used to study the QWI effect. The result shows that the PL intensity is reduced for the MOCVD samples, while the MBE samples have up to 47 times increase of PL intensity. After QWI process, all the samples have a blue-shift in PL spectra. The 1.55mm InGaAsP laser structures by MOCVD have a maximum blue-shift of 34nm, and the MBE samples of 12nm after 800℃ annealing.
    Advisory Committee
  • Shoou-Jinn Chang - chair
  • Wen-Jeng Ho - co-chair
  • Tao-Yuan Chang - co-chair
  • Jung-Tsung Hsu - co-chair
  • Tsong-Sheng Lay - advisor
  • Files
  • etd-0705102-202025.pdf
  • indicate in-campus access in a year and off_campus not accessible
    Date of Submission 2002-07-05

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