Title page for etd-0705102-041439


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URN etd-0705102-041439
Author Wen-Da Liu
Author's Email Address wdliou@pchome.com.tw
Statistics This thesis had been viewed 5337 times. Download 11691 times.
Department Electro-Optical Engineering
Year 2001
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Electrical characteristics of ultra-thin high-k gate oxide-semiconductor interfaces
Date of Defense 2002-06-20
Page Count 88
Keyword
  • Y2O3
  • GaAs
  • Gd2O3
  • Si
  • MOS capacitor
  • Abstract Abstract
    The purpose of this thesis is to study the electrical characteristics of ultra-thin high-k gate oxide-semiconductor interfaces. The measured samples are Y2O3/Si、Gd2O3/GaAs、Ga2O3(Gd2O3)/GaAs MOS capacitors. An accurate C-V relation has been obtained consistently by using a model that includes both series and shunt parasitic resistances. Using the semiconductor parameters and the oxide parameters, an ideal C-V curve with Dit = 0 is fitted to the accurate capacitance data, and the interface state density is deduced by Terman method. After post - metallization annealing (PMA) at 425℃, the oxide charge density, interface state density and leakage current were reduced. The results are following : (1) For Y2O3/Si MOS capacitors, we obtained a oxide charge density ~ 7.7 x 1010 cm-2, an interface state density ~ 3.6 x 1010 cm-2ev-1, and an equivalent oxide thickness ~ 52Å; (2) For Gd2O3/GaAs MOS capacitors, we obtained a oxide charge density ~ 9.8 x 1011 cm-2, an interface state density ~ 2 x 1011 cm-2ev-1, and an equivalent oxide thickness ~ 57Å; (3) For Ga2O3(Gd2O3)/GaAs MOS capacitors, we obtained a oxide charge density ~ 4.2 x 1012 cm-2, an interface state density ~ 6 x 1011 cm-2ev-1, and an equivalent oxide thickness ~ 91Å. The dielectric constants obtained from our data are smaller than the reported values. A possible explanation is that an interfacial layer formed at the oxide/semiconductor interface to reduce equivalent dielectric constant.
    Advisory Committee
  • Yeong-Her Wang - chair
  • Tao-Yuan Chang - co-chair
  • Ming-Kwei Lee - co-chair
  • Li-Wei Tu - co-chair
  • Tsong-Sheng Lay - advisor
  • Files
  • etd-0705102-041439.pdf
  • indicate in-campus access immediately and off_campus access in a year
    Date of Submission 2002-07-05

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