Title page for etd-0704101-023801


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URN etd-0704101-023801
Author Chun-Te Lu
Author's Email Address m8831602@student.nsysu.edu.tw
Statistics This thesis had been viewed 5339 times. Download 5361 times.
Department Electrical Engineering
Year 2000
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title The preparation and properties of the pH-ISFET with amorphous PbTiO3 membrane by
the sol-gel technique
Date of Defense 2001-06-29
Page Count 118
Keyword
  • EIS structure
  • sol-gel
  • amorphous lead titanate
  • hysteresis
  • response stable time
  • drift
  • ISFET
  • Abstract Ion-sensitive field effect transistors (ISFET's) have many advantages than the conventional ion selective electrode. Small size, fast response and compatible with conventional IC technologies were the most important advantages. The general structure of ISFET was the same with MOSFET, but the main difference is that the metal gate in MOSFET was replaced by reference electrode/electrolyte/insulator(ionic sensor membrane) structure in ISFET. The insulator surface will suffer the change of potential as the is sample immersed into electrolyte, by which, we can measure the pH or other ionic concentration.
    In this thesis the amorphous lead titanate (a-PbTiO3) thin film was prepared by sol-gel method to be the sensor gate of ISFET. The lead titanate thin films were deposited on SiO2(1000Å)/p-Si substrates, and the EIS structure was obtained. The flat-band voltage(ΔVBF) can be shifted by C-V measurement. The optimum conditions were found that the firing temperature was about 4000C and thin film thickness was about 0.5
    Advisory Committee
  • Jung-Chuan Chou - chair
  • Nan-Chung Wu - co-chair
  • Houng-Mo Duh - co-chair
  • Man-Phon Houng - co-chair
  • Ying-Chung Chen - advisor
  • Files
  • etd-0704101-023801.pdf
  • indicate in-campus access immediately and off_campus access in a year
    Date of Submission 2001-07-04

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