Title page for etd-0703116-162550


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URN etd-0703116-162550
Author Yi-Hsien Tu
Author's Email Address No Public.
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Department Physics
Year 2015
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Impedance Analysis of TiO2/HfO2 Superlattices on c-Al2O3
Date of Defense 2016-07-20
Page Count 57
Keyword
  • HfO2
  • TiO2
  • Impedance Analysis
  • Dielectric Constant
  • Superlattices
  • Abstract This thesis is mainly researching on the impedance measurement and analysis of TiO2/HfO2 superlattices on c-sapphire substrate, equivalent circuit were proposed and simulated to acquire the dielectric properties of superlattices thin film. RF magnetron multi target sputtering has been used to deposited TiO2/HfO2 superlattices thin film on top of c-oriented sapphire substrate, the thin film is then analyzed by X-ray diffraction to determine its structure and parameter. By alternating the thickness proportion of superlattices periodicity will also change its band structure and characteristic, TiO2/HfO2 superlattices strain induced HfO2 to form epitaxial structure, stacking on top of rutile-TiO2 also induced it to follow the binding form into rutile structure. To determine the dielectric properties of this innovative structure, Ti/Ni metal electrode were deposited by PVD-system Electron beam physical vapor deposition on top of the superlattices thin film. The impedance value and phase term were measured by an impedance analyzer. By proposing the equivalent circuit through sample structure, we can extract the dielectric properties of the superlattices thin film.
    Advisory Committee
  • Den-Jun Jang - chair
  • Chih-Hsiung Liao - co-chair
  • Feng-Chuan Chuang - co-chair
  • Yung-Sung Chen - advisor
  • Files
  • etd-0703116-162550.pdf
  • Indicate in-campus at 3 year and off-campus access at 3 year.
    Date of Submission 2016-08-03

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