Title page for etd-0701100-170858


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URN etd-0701100-170858
Author Chien-Ju Yin
Author's Email Address m8723622@student.nsysu.edu.tw
Statistics This thesis had been viewed 5288 times. Download 4867 times.
Department Physics
Year 1999
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Effect of modulating field on photoreflectance of surface-intrinsic-n+ type doped GaAs
Date of Defense 2000-06-07
Page Count 39
Keyword
  • modulation spectroscopy
  • light hole
  • heavy hole
  • PR
  • ER
  • Fast Fourier Transform
  • Abstract Abstracts
     Photoreflectance(PR) of surface-intrinsic n+ type doped GaAs has been measured for various power densities of pumping laser.The spectra exhibited many Franz-Keldysh oscillations,where by the electric field(F) can be determined from the technique of the fast fourier transform.It is known that F's determined from PR are subjected to photovoltaic effect ,but it is difficult to estimate the strength of modulating field in the PR measurements.Hence we have investigated the relation between F and modulating field by using electroreflectance to simulate PR.In this work,the relation will be confirmed by using solely PR.Here a method was devised to obtain the strength of modulating field in the PR measurements.The photo-voltage(Vs)of the pump beam can be measured directly with a lock-in amplifier by making electrical contacts on the front and rear sides of the sample.The strengh of modulation field is equal to Vs/d due to a uniform F in the undoped layer,where d is the thickness of the undoped layer.
    Advisory Committee
  • Ting-Chang Chang - co-chair
  • Yan-Tan Lu - co-chair
  • Dong-Po Wang - advisor
  • Files
  • m8723622.pdf
  • indicate in-campus access immediately and off_campus access in a year
    Date of Submission 2000-07-01

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