Title page for etd-0631113-231027


[Back to Results | New Search]

URN etd-0631113-231027
Author Han-Kuang Peng
Author's Email Address No Public.
Statistics This thesis had been viewed 5359 times. Download 1179 times.
Department Mechanical and Electro-Mechanical Engineering
Year 2012
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory
Date of Defense 2013-06-28
Page Count 101
Keyword
  • RRAM
  • SiO2
  • High-K
  • HfO2
  • energy dissipation rate
  • Low-K
  • critical energy
  • Abstract In this thesis, silicon dioxide (SiO2) doped hafnium oxide (HfO2) is applied to form low-k doped high-k materials, and the multilayer structure is used to enhance the resistive random access memory (RRAM) properties. Hafnium oxide RRAM device has very fast switching speed, so that it is easy to occure overshooting. The experimental results show that doping through this way can improve its retention. The resistive state was kept stable over 104 second at 85℃, and RRAM with multilayer structure could be operated over 80 million times.
    The second part of this work has applied Fast IV systems to analyze the RRAM electric properties. The response time could be shortened up to 10 ns. To track the reset process of RRAM devices a negative triangle wave pulse bias is applied. It is found that the reset voltage decreases with the increased rising time of the applied pulse. To analyze the experimental data, a critical voltage was defined when the rising time is infinity. When the RRAM device is at reset, and if the operation is slow, the energy will be dissipated. Through the Fast IV measurement method can obtain voltage, current then the time, the energy required before RRAM reset can be calculated. The critical energy and energy dissipation rate can be obtained by varying different raising time of the fast I-V measurement. When the set compliance current is enlarged, the critical energy and energy dissipation rate becomes greater, and the dissipation area become greater. By measuring at low temperature, RRAM filament will be thinner, because the oxidation reaction rates become slow.
    Advisory Committee
  • Yih-Tun Tseng - chair
  • Tsung-Ming Tsai - co-chair
  • Ting-Chang Chang - advisor
  • Tai-Fa Young - advisor
  • Files
  • etd-0631113-231027.pdf
  • Indicate in-campus at 3 year and off-campus access at 3 year.
    Date of Submission 2013-09-09

    [Back to Results | New Search]


    Browse | Search All Available ETDs

    If you have more questions or technical problems, please contact eThesys