Title page for etd-0630113-115818


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URN etd-0630113-115818
Author Shu-ping Liang
Author's Email Address No Public.
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Department Mechanical and Electro-Mechanical Engineering
Year 2012
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Study on Resistance Switching Mechanism in Resistance Random Access Memory with ITO Electrode
Date of Defense 2013-06-28
Page Count 93
Keyword
  • Transparent conductive film of ITO
  • SCCO2
  • Comsol simulation
  • Resistance Random access memory
  • Abstract ITO is a transparent conductive film, owning to high transmittance and good electrical conductivity, ITO has been applied in a wide range over touch panel, solar cell and plasma display. Therefore application of ITO transparent conductive film in resistive random access memory (RRAM) has been studied in this thesis, ITO is promising power consumption inhibitive material in the fabrication of RRAM devices. Meanwhile, operating voltage can be effectively reduced, which makes it possible for the application in stacking memory array. Multi-target magnetron sputtering system is used to deposition ITO/Gd:SiO2/TiN Metal-Insulator-Metal RRAM structure. Besides high and low resistance states of RRAM are investigated by measuring IV electrical curve. Set and Reset operating voltage exhibit asymmetric property, namely Set voltage is about 0.2V and Reset voltage is about 0.5V. Conduction current fitting is applied to explore the reason of the asymmetric voltage, and a model of ellipse depletion region is proposed to explain the abnormal phenomenon. Furthermore, the RRAM property of ITO/SiO2: Gd /TiN sample is measured under UV and red light illumination. Comparing the results obtained before and after light exposure, it is found the low resistance state (LRS) conduction mechanism of the sample transforms from Schottky emission to Poole-Frenkel (after exposure). Due to the activation of defects in ITO film, electrons can hop within the defects. In this work, it is found the ultra-small set voltage results from the combination effects of critical voltage and oxygen ion concentration gradient. Variation the thickness of ITO electrodes is carried out to investigate the influence of oxygen ion concentration gradient. Simulation result by Comsol proves asymmetric property of I-V curve. In addition, the operating current of the device decreases 2.5 times for ITO sample after super critical CO2 (SCCO2) treatment, due to the defects reparation process through the introduction of oxygen from H2O. And the repairing process will facilitate the decrease of RRAM operating current and power consumption.
    Advisory Committee
  • Yih-Tun Tseng - chair
  • Tsung-Ming Tsai - co-chair
  • Ting-Chang Chang - advisor
  • Tai-Fa Young - advisor
  • Files
  • etd-0630113-115818.pdf
  • Indicate in-campus at 3 year and off-campus access at 3 year.
    Date of Submission 2013-07-31

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