Title page for etd-0629114-160510


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URN etd-0629114-160510
Author Zong-Yi Lin
Author's Email Address No Public.
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Department Electro-Optical Engineering
Year 2013
Semester 2
Degree Master
Type of Document
Language English
Title Wafer Bonding III-V/SOI Photodetector for Coarse Wavelength Division Multiplexing (CWDM) Application
Date of Defense 2014-07-22
Page Count 106
Keyword
  • Sub-micro Waveguide
  • Quantum Well Intermixing
  • Resonant Method Coupling
  • Wafer Bonding
  • Dry Etching
  • Abstract Silicon photonics is a promising technique for improving optical transmission capability in optical interconnect and fiber transmission due to its mutual processing. However, the indirect bandgap render Si material with inefficient and absorption properties, leading to low flexibility and less functionality in designing receivers in photonic integration. Lately because of the constantly growing requirement of data rate, coarse wavelength division multiplexer (CWDM) technique offers a good solution for increasing data capacity, inducing the need of wavelength-selective device and the integration. In this work, a novel CWDM-based photodetectors integrated with silicon-on-insulator (SOI) waveguide template and hybrid tapered waveguide coupler is proposed. Using multi-quantum well (MQW) intermixing in III-V material bonded with SOI substrate, CWDM functionality of III-V waveguide can be integrated with the passive element in SOI template.
    With InGaAsP MQW intermixing to extract 3 sectional of different bandgap tailoring, the material is successfully bonded to SOI material. By utilizing impurity free vacancy disordering methods, absorption wavelength of 3 sections are shifted by 1540nm, 1500nm, 1450nm and 1400nm. A low temperature bonding processing with 40 nm ultra-thin bonding interface was achieved and bonding area is 1cm x 1cm. By applying resonant coupling, only 35 um coupling length in directional coupler is designed, attaining 95% coupling coefficient. 0.3um wide tip tapered waveguide is also is obtained by undercut Cr etching technique and an etching depth 2.7nm smooth and vertical profile is obtained. In silicon waveguide 0.7um width smooth and vertical waveguide was also obtained.
    Advisory Committee
  • Ann-Kuo Chu - chair
  • Chao-Kuei Lee - co-chair
  • Wei Lin - co-chair
  • Yung-Jr Hung - co-chair
  • Yi-Jen Chiu - advisor
  • Files
  • etd-0629114-160510.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2014-07-29

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