Title page for etd-0629114-155250


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URN etd-0629114-155250
Author Ching Chen
Author's Email Address No Public.
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Department Electro-Optical Engineering
Year 2013
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Ultra-Compact Polarization Rotators Based on Surface Plasmon Polariton
Date of Defense 2014-07-16
Page Count 77
Keyword
  • Surface Plasmon Polariton
  • Polarization Rotator
  • Abstract Silicon-On-Insulator (SOI) waveguides have attracted great attention for their ability to confine light in a small region. However, one of the main drawbacks of SOI waveguides is their strong polarization dependence. To overcome this issue, variety types of silicon-based polarization rotators have been proposed with long device lengths to achieve sufficient extinction ratios and low insertion losses.
    We first utilize the surface plasmon polariton (SPP) effect to design an ultra-compact polarization rotator consisting of a SOI waveguide covered by a linearly tapered aluminum with a silica gap. The numerical results from a three-dimensional finite element method (3-D FEM) show that the extinction ratio can be enhanced by increasing the device length and reducing the gap. We can obtain a 5.2-μm long polarization rotator with 20.76-dB extinction ration and 2.9-dB loss for TM–TE conversion, and 5-μm long device length with 17.36-dB extinction ration and 2.7-dB insertion loss for TE–TM conversion.
    We have also proposed a tilt-metal-grating polarization rotator to achieve TE–TM conversion with high extinction ratio. The polarization conversion efficiency is in proportional to the increased metal thickness and decreased silica gap. Finally, we can obtain a 2.2-μm long polarization rotator with 20.84-dB extinction ration and 3.3-dB insertion loss by optimizing the performance of the rotator.
    Advisory Committee
  • Wood-Hi Cheng - chair
  • Hung-wen Chang - co-chair
  • Yu-Ju Hung - co-chair
  • Jui-Yang Feng - co-chair
  • Chin-Ping Yu - advisor
  • Files
  • etd-0629114-155250.pdf
  • Indicate in-campus at 5 year and off-campus access at 5 year.
    Date of Submission 2014-07-29

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