Title page for etd-0629103-160054


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URN etd-0629103-160054
Author Po-Ping Shen
Author's Email Address No Public.
Statistics This thesis had been viewed 5350 times. Download 19 times.
Department Electro-Optical Engineering
Year 2002
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Optical Spectroscopic Study of InGaAsN Semiconductor Quantum Wells
Date of Defense 2003-06-23
Page Count 68
Keyword
  • InGaAsN
  • Quantum well
  • Abstract   From PL spectrum of InGaAsN LD structures grown by MOCVD and MBE, we observe remarkable red shift of the wavelength after the addition of small concentration of nitrogen. For MOCVD growth, the concentration of nitrogen increases from 0.3% to 0.5%, and the wavelength improve from 1.17μm to 1.202μm. For MBE growth, the concentration of nitrogen increases from 2.1% to 2.6%, and the wavelength improve from 1.196μm to 1.289μm. When the concentration arrived 3%, we find the wavelength already unable to improve to long wavelength. We also observed the changes the PL peak like S-shaped from temperature-depentent PL spectrum.
      For the photocurrent and electroabsorption measurement, we prepared two the same concentration of nitrogen 2.1% samples, but different structures ,one is TR538 single quantum well structure, the other is TR515 double quantum well structure. The e1-hh1transition can be observed clear at λ=1.192 of TR515, but it was unapparent for TR538. Now, let us focus on the photocurrent and Δα signal of the fundamental e1-hh1 transitions for the largest reverse bias voltage swing(0-6v) , the maximum absorption changes of around 5394cm-1 for TR538 and 14439cm-1 for TR515. The refractive index changes of 0.019 for TR538 and 0.035 for TR515.
    Advisory Committee
  • Shoou-Jinn Chang - chair
  • Lung-Han Peng - co-chair
  • Tsong-Sheng Lay - co-chair
  • Yi-Jen Chiu - co-chair
  • Tao-Yuan Chang - advisor
  • Files
  • etd-0629103-160054.pdf
  • indicate in-campus access in a year and off_campus not accessible
    Date of Submission 2003-06-29

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