Title page for etd-0627100-163547


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URN etd-0627100-163547
Author Yu-An Kuan
Author's Email Address m8731601@student.nsysu.edu.tw
Statistics This thesis had been viewed 5336 times. Download 9737 times.
Department Electrical Engineering
Year 1999
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title The Properties and Theoretical Modle of ZnSe Thin Film
Date of Defense 2000-06-23
Page Count 96
Keyword
  • MBE
  • ZnSe
  • Thin Film Properties
  • Abstract   Zinc selenide is a wide bandgap II-VI semiconductor. The minimum bandgap at
    Γ point (zone center) is direct and has a room temperature value of 2.67eV,
    corresponding to the blue region of the visible spectrum (464nm).
      Molecular beam epitaxy (MBE) is an ultra high vacuum technique used for the
    growth of semiconductors. The molecular beam epitaxy system used for the growth
    of semiconductors . The molecular beam epitaxy system used for growth of the
    II-VI semiconductor layers is described in detail in Chapter 2. Chapter 3 describes the
    substrate preparation procedure and growth of ZnSe epitaxial layers. Last, information
    from characterization technique has been used to analysis the quality of the layers and
    hence determine referred growth conditions.
    Advisory Committee
  • Cheu-Pyeng Cheng - chair
  • Mau-Phon Houng - co-chair
  • Yeong-Her Wang - co-chair
  • Wei-Chou Hsu - co-chair
  • Herng-Yih,Ueng - advisor
  • Files
  • 本文.pdf
  • 目錄.pdf
  • 表4-1.pdf
  • indicate access worldwide
    Date of Submission 2000-06-27

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