||In this thesis, we use LiGaO2 (LGO)(001) substrate to grow on epitaxial gallium oxide (Ga2O3) by chemical vapor deposition (CVD). Pure gallium metal is used as reaction source. High purity nitrogen and oxygen are used as carrier gas and reaction gas, respectively. |
The experiment has four parts. First, epitaxial gallium oxide growth under various temperatures were investigated. Second, the dependence of growth characteristics in different oxygen partial pressure were investigated. In the third part, the dependence of growth characteristics in different growth pressure were investigated. In last part, the dependence of epitaxial gallium oxide growth time were investigated.
Crystal quality of Ga2O3 was investigated by X-ray diffraction (XRD). The surface morphology and crystal structure were analyzed using Scanning electron microscope (SEM). The growth mechanism were analyzed using transmission electron microscope (TEM). Furthermore, cathodoluminescence (CL), atomic force microscope(AFM), transmissionphoto spectroscopy and hall effect were used to study optical properties, the surface roughness of the materials, energy band gap and carrier type.
The wide bandgap semiconductor material of β-Ga2O3 can be obtained at the growth parameters of 780°C, 45 torr, 100/100 sccm of O2/N2 and 90 minutes. The analytic results of cathodoluminescence showed the luminescence property of ultraviolet emission, and showed the band gap of 4.93 eV. The n-type Ga2O3 films were grown on the LGO substrate.