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|Type of Document
||The study of Optoelectronic Characteristics in phosphorescent Organic Light-Emitting Diode based on p-i-n and tandem structures|
|Date of Defense
||This study combine with p-i-n and tandem structure to obtain the p-i-n tandem structure OLED.Because of the tandem structures which are composed of p-type (F4-TCNQ) and n-type (HAT-CN) doped layers in common,we can connect two p-i-n units structure and take the p-n junction as interlayer.Some research topics are included in this research :|
(1) Study of carrier generation and other optoelectronic characteristics for tandem cells.
(2) Study of different p-typed and n-typed concentration doped to basic structure.
The results shows that concentration of F4-TCNQ and HAT-CN will affect optoelectronic characteristics.And we final find the best concentration of HAT-CN(50%) to obtain the high efficiency p-i-n tandem structure with max current efficiency 16.2 cd/A and power efficiency 1.8 lm/W .
||Chih-Chien Lee - chair|
Shun-Wei Liu - co-chair
Yu-kai Han - co-chair
Wen-Yao Hung - co-chair
Mei-Ying Chang - advisor
Indicate in-campus at 99 year and off-campus access at 99 year.|
|Date of Submission