Title page for etd-0623117-190757


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URN etd-0623117-190757
Author You-jhih Yan
Author's Email Address zxab1212128@gmail.com
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Department Materials and Optoelectronic Science
Year 2016
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Study of crystal properties of topological insulators of Sb2Te3-xSex
Date of Defense 2017-07-19
Page Count 78
Keyword
  • Crystal growth
  • Topological insulator
  • Sb2Te3-xSex
  • Abstract Sb2Te3-xSex crystal are grown by Bridgman method. The optimal growth conditions and the effect of different ratios of Te and Se in Sb2Te3-xSex crystal are investigated. By using angle resolution photoelectron spectroscopy(ARPES), the topological properties have been confirmed. Electron probe microanalyzer(EPMA)is used to analyze the compositions of the crystal samples. X-ray diffraction(XRD)and Transmission electron microscope(TEM)results confirm that the as-grown crystal with doping concentration of x=1.5~2.4 belong to the rhombohedral structure and those with x=2.6~3 belong to the orthorhombic structure. The crystal vibration mode and rotation mode are investigated by Raman spectroscopy. The main carrier and carrier concentration in the crystal are deduced from measuring the Hall effect at room temperature.
    Advisory Committee
  • Shi-Hsin Lin - chair
  • Chao-Kuei Lee - co-chair
  • Shiu-Ming Huang - co-chair
  • Ming-Chi Chou - advisor
  • Files
  • etd-0623117-190757.pdf
  • Indicate in-campus at 5 year and off-campus access at 5 year.
    Date of Submission 2017-07-25

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