Title page for etd-0621115-130819


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URN etd-0621115-130819
Author Sheng-an Yang
Author's Email Address No Public.
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Department Electro-Optical Engineering
Year 2014
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Using Quantum Well Intermixing for Integration of Electroabsorption Modulators and Semiconductor Optical Amplifiers
Date of Defense 2015-06-23
Page Count 99
Keyword
  • Quantum Well Intermixing
  • Photonic integrated circuit
  • Bandgap engineering
  • SiO2
  • Impurity Free Vacancy Diffusion
  • Abstract In this dissertation, a quantum well intermixing (QWI) technology, called as impurity free vacancy diffusion (IFVD), is used to perform the bandgap engineering of material in order to improve monolithic photonic integration performance. Monolithic integration of SOA and EAM is taken as test devices. By IFVD with patterned area, the regional bandgap of EAM area has blue shift in transition energy level, while SOA area remains the same. So that, quantum confined Stark effect in EAM can have matched wavelength with SOA area, enhancing the overall efficiency.
      In the processing, SiO2 film is deposited on top of the sample for controlling the 
    IFVD. Through diffusion of Ga atom into SiO2 film for releasing stress of wafer
    during high temperature rapid thermal annealing, the vacancies simultaneously are
    created in material, enhancing QWI processing. Thus, locally pattering SiO2 film can
    induce the lateral bandgap engineering. In this processing, GaAs material is used as
    cap layer to reduce As desorption during annealing, allowing QWI processing as in
    lower temperature regime and thus reducing the parasitic diffusion processing, for
    example Zn. 1.3cm×1.3cm wafer with InGaAsP MQW is used as sample to integrate
    SOA and EAM. The 650oC annealing temperature with one minute time has induced
    40nm wavelength difference along 40μm×200μm area. EAM with QWI has been to
    found to have the same extinction ratio in comparison to the one without QWI,
    suggesting low parasitic atom diffusion. Also, gain of 20 dB in SOA is also observed,
    showing the potential application of monolithic integration with regrowth free processing.
    Advisory Committee
  • Shoou-Jinn Chang - chair
  • An-Kuo Chu - co-chair
  • Chao-Kuei Lee - co-chair
  • Wei Lin - co-chair
  • Yi-Jen Chiu - advisor
  • Files
  • etd-0621115-130819.pdf
  • Indicate in-campus at 5 year and off-campus access at 5 year.
    Date of Submission 2015-07-21

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