Title page for etd-0620100-161951


[Back to Results | New Search]

URN etd-0620100-161951
Author Wen-Chang Kuo
Author's Email Address lalama@ms4.url.com.tw
Statistics This thesis had been viewed 5559 times. Download 3163 times.
Department Physics
Year 1999
Semester 2
Degree Master
Type of Document
Language English
Title Processes and Characteristic Analysis of
GaN MOS Structure
Date of Defense 2000-06-21
Page Count 96
Keyword
  • GaN
  • MOS
  • Abstract In this thesis we reveal that the Ohmic contacts
    of n-type and p-type GaN are obtained by the
    method of thermal evaporation. For different 
    types of GaN, different metals are used to
    evaporate on GaN surface to form Ohmic contact.
    The measurements of specific contact resistivity
    were performed by TLM (transmission line model)
    for different types of GaN. Also, we use a shadow
    mask to form four Ohmic contacts on four corners
    of GaN surface , and utilize the four contacts to
    perform Hall measurement by Van der Pauw method.
    By the data of Hall measurement, it indicates
    that the specific contact resistivity of heavily
    doped samples are smaller than lightly doped
    samples. The effect of intensity photoluminescence
    ( PL ) spectrum of different annealing treatment
    of p-type GaN are also demonstrated in this thesis.
    And the carrier concentration of p-type GaN will
    change with different annealing condition.
      The method of C-V analysis is a powerful
    technique to determine the parameters of device.
    In this thesis, we exhibit completed formulation
    of how to calculate all the parameters of MOS
    structure, using Ga2O3/p-GaAs MOS structure as
    calculated sample. The high frequency C-V curve
    of Ta2O5/n-GaN MOS structure reveals a possibility
    for fabricating a MOSFET using Ta2O5 as insulated
    layer and GaN as substrate. In this thesis, we
    utilize Ta2O5 as insulated material, because
    Ta2O5 is a material with high dielectric constan.
    Advisory Committee
  • Ting-Chang Chang - co-chair
  • Yan-Ten Lu - co-chair
  • IKai Lo - co-chair
  • Li-We Tu - advisor
  • Files
  • Processes and Characteristic Analysis of GaN MOS Structure.pdf
  • indicate access worldwide
    Date of Submission 2000-06-20

    [Back to Results | New Search]


    Browse | Search All Available ETDs

    If you have more questions or technical problems, please contact eThesys