Title page for etd-0620100-141802


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URN etd-0620100-141802
Author Zhi-Wei Yueh
Author's Email Address m8735614@student.nsysu.edu.tw
Statistics This thesis had been viewed 5559 times. Download 4618 times.
Department Electro-Optical Engineering
Year 1999
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title The study of barrier mechanisms of tantalum nitride diffusion barrier layer between GaAs and Cu
Date of Defense 2000-06-19
Page Count 68
Keyword
  • diffusion barrier layer
  • tantalum nitride
  • Abstract Abstract
      The behaviors of the TaNx barrier layer that placed
    between the Cu metal and GaAs have been studied
    by using X-ray diffraction, X-ray photoelectron
    spectroscopy and scanning electron microscopy.
    The TaNx and Cu films were deposited on GaAs
    sequentially with RF magnetron sputter.
      With a 250 nm thick TaNx barrier layer, the Cu
    metal can be impeded from reacting with GaAs
    substrate at 575℃annealed for one hour.
    Within an As or Ga overpressure environment condition,
    the failure temperature still occurred below 600℃.
    The failure of TaNx diffusion barrier layer for
    preventing the reaction of the Cu and GaAs was originated
    for the dissociation of the GaAs itself at 580℃.
    The outgoing As atoms increased the deterioration speed
    of the TaNx film and reduced its blocking ability.
    Advisory Committee
  • Sheng-Lung Huang - chair
  • Bae-Heng Tseng - co-chair
  • Huang-Yeu Hsieh - advisor
  • Files
  • 論文轉pdf.pdf
  • indicate access worldwide
    Date of Submission 2000-06-20

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