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|Type of Document
||The study of barrier mechanisms of tantalum nitride diffusion barrier layer between GaAs and Cu|
|Date of Defense
||diffusion barrier layer
The behaviors of the TaNx barrier layer that placed
between the Cu metal and GaAs have been studied
by using X-ray diffraction, X-ray photoelectron
spectroscopy and scanning electron microscopy.
The TaNx and Cu films were deposited on GaAs
sequentially with RF magnetron sputter.
With a 250 nm thick TaNx barrier layer, the Cu
metal can be impeded from reacting with GaAs
substrate at 575℃annealed for one hour.
Within an As or Ga overpressure environment condition,
the failure temperature still occurred below 600℃.
The failure of TaNx diffusion barrier layer for
preventing the reaction of the Cu and GaAs was originated
for the dissociation of the GaAs itself at 580℃.
The outgoing As atoms increased the deterioration speed
of the TaNx film and reduced its blocking ability.
||Sheng-Lung Huang - chair|
Bae-Heng Tseng - co-chair
Huang-Yeu Hsieh - advisor
indicate access worldwide|
|Date of Submission