Title page for etd-0619109-181220


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URN etd-0619109-181220
Author Shih-Yu Huang
Author's Email Address No Public.
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Department Electro-Optical Engineering
Year 2008
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Fabrication and characterization of InOX transparent
thin film transistors on plastic substrates
Date of Defense 2009-06-19
Page Count 54
Keyword
  • sputter
  • room temperature
  • plastic
  • InO TFT
  • Abstract Transparent InO (Indium oxide) thin-film transistors fabricated by reactive ratio frequency (rf) magnetron sputtering at room temperature were demonstrated on glass and plastic substrates. The resistivity, transmittance, X-ray diffraction pattern, and surface morphology of the films prepared at a 50% oxygen partial pressure were investigated, the resistivity and the average transmittance of the films were 4.2×104 Ω-cm and 87 %, respectively. In addition, Indium tin oxide (ITO) and silicon nitride (SiNX) thin films were used as the electrode and gate insulator. The resistivity and the average transmittance of ITO electrodes were 7×10-4 Ω-cm and 85%. On the other hand, the maximum leakage current of less than 10-9A/cm2 was obtained for the SiNX layer at an electric field of 1 MV/cm.
    For the InO TFT on glass substrate with 6 μm channel length and 20 μm channel width, the measured saturation mobility, threshold voltage, on/off ratio and subthreshold swing are 9.39V-1s-1, 1.5V, 2.2×107and 0.5 V/decade. For the TFTs prepared on plastic substrate, the measured saturation mobility, threshold voltage, on/off ratio and subthreshold swing are 8.19V-1s-1, 1.83V, 1.43.×106and 0.8 V/decade, respectively.
    Advisory Committee
  • Ting-Chang Chang - chair
  • Chao-Kuei Lee - co-chair
  • Wen-Yao Huang - co-chair
  • Ann-Kuo Chu - advisor
  • Files
  • etd-0619109-181220.pdf
  • indicate accessible in a year
    Date of Submission 2009-06-19

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