Title page for etd-0618114-101614


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URN etd-0618114-101614
Author Chih-wei Yeh
Author's Email Address No Public.
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Department Materials and Optoelectronic Science
Year 2013
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Preparation of Cu2ZnSnSe4 thin films by rapid thermal selenization for photovoltaic applications
Date of Defense 2014-06-26
Page Count 73
Keyword
  • thin film solar cell
  • elemental precursors
  • rapid thermal processing
  • selenization
  • Cu2ZnSnSe4
  • Abstract Single-phase Cu2ZnSnSe4 (CZTSe) films had been successfully prepared by rapid thermal selenization in this work. Unlike conventional selenization process that requires half an hour to complete the reaction, rapid thermal annealing process only takes 3 minutes (using a temperature ramp rate above 10oC/sec and kept at 500oC for 2 minutes).
     Phase identification using X-ray diffraction, Raman spectroscopy, optical absorption spectroscopy indicated the films prepared with the preset composition of Zn/Sn=1.2, 0.6≦Cu/(Zn+Sn)≦0.75, Se/(Cu+Zn+Sn)=1.2 may achieve single-phase CZTSe films. The film resistivity depending on chemical composition can be controlled from 7 to 7000 Ω-cm.Grain structure of CZTSe had been further improved by incorporating a very thin layer of Sb (10-15 nm) in the precursor films. A typical CZTSe film had an average grain size of 750 nm and a bandgap of 1.0 eV. A preliminary result on energy conversion efficiency obtained from a solar cell using a CZTSe film as light absorption layer was 0.62%.
    Advisory Committee
  • Mau-Phon Houng - chair
  • Wei-Hung Su - co-chair
  • Bae-Heng Tseng - advisor
  • Files
  • etd-0618114-101614.pdf
  • Indicate in-campus at 5 year and off-campus access at 5 year.
    Date of Submission 2014-08-07

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