Title page for etd-0618113-050009


[Back to Results | New Search]

URN etd-0618113-050009
Author Jia-Siang Li
Author's Email Address No Public.
Statistics This thesis had been viewed 5386 times. Download 4156 times.
Department Physics
Year 2012
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Graphene growth on 6H-SiC(0001)
Date of Defense 2013-06-28
Page Count 108
Keyword
  • Graphene
  • Argon pressure
  • SiC
  • Vacuum
  • Hydrogen etching
  • Abstract The method of growing grapheme by SiC has been studied for a long time. The production is affected by several factors, including growth temperature, rate of raising temperature, hold time, degree of vacuum, pressure of scheme during graphitization, and quality of SiC etched by hydrogen. In this thesis, we focus on finding the best parameters of hydrogen etching and graphitization so as to remove scratch on the surface of SiC and to produce steps in the order of nanometer. We find hexagonal structure on the surface of SiC because of the existence of dangling-bond at the edge of step in our experiment. We will explain the mechanism of that phenomenon resulting from dangling-bond and its physical meaning. We conduct three experiments for various parameters of argon pressures, including one atmosphere, low pressure, and vacuum, and we try to find the optimized growth temperature and hold time for the three cases. Finally, we will discuss the difficulties due to environment in the process of producing graphene and propose some possible approaches to improve them.
    Advisory Committee
  • Yung-Sung Chen - chair
  • Li-Wei Tu - co-chair
  • Da-Ren Hang - co-chair
  • Chien-Cheng Kuo - advisor
  • Files
  • etd-0618113-050009.pdf
  • indicate access worldwide
    Date of Submission 2013-07-18

    [Back to Results | New Search]


    Browse | Search All Available ETDs

    If you have more questions or technical problems, please contact eThesys