||Transparent InO (Indium oxide) thin-film transistors fabricated by reactive ratiofrequency (rf) magnetron sputtering at room temperature were demonstrated. The resistivity, transmittance, X-ray diffraction pattern, and surface morphology of the films prepared at different oxygen partial pressures were investigated. At a 50% oxygen partial pressure, the resistivity and the average transmittance of the films are 4.7×104 Ω-cm and 87 %, respectively. Indium tin oxide (ITO) and silicon nitride (SiNX) thin films are used as the electrode and gate insulator. The resistivity and the average transmittance of ITO electrodes are 7×10-4 Ω-cm and 85%. On the other hand, the maximum leakage current of less than 1×10-10A/cm2 was obtained for the SiNX layer at an electric field of 1 MV/cm. |
For a 20μm channel length InO TFT , the measured saturation mobility, threshold voltage, on/off ratio and subthreshold swing are 3.8 cm2V-1s-1, 1.72 V, 2.3×106 and 1.56 V/decade, respectively.