Title page for etd-0616108-221511


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URN etd-0616108-221511
Author Chu-Yin Hung
Author's Email Address No Public.
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Department Electro-Optical Engineering
Year 2007
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Fabrication and characterization of Transparent Indium oxide thin-film transistors at room temperature
Date of Defense 2008-06-11
Page Count 56
Keyword
  • TFT
  • InO
  • Abstract Transparent InO (Indium oxide) thin-film transistors fabricated by reactive ratiofrequency (rf) magnetron sputtering at room temperature were demonstrated. The resistivity, transmittance, X-ray diffraction pattern, and surface morphology of the films prepared at different oxygen partial pressures were investigated. At a 50% oxygen partial pressure, the resistivity and the average transmittance of the films are 4.7×104 Ω-cm and 87 %, respectively. Indium tin oxide (ITO) and silicon nitride (SiNX) thin films are used as the electrode and gate insulator. The resistivity and the average transmittance of ITO electrodes are 7×10-4 Ω-cm and 85%. On the other hand, the maximum leakage current of less than 1×10-10A/cm2 was obtained for the SiNX layer at an electric field of 1 MV/cm.
    For a 20μm channel length InO TFT , the measured saturation mobility, threshold voltage, on/off ratio and subthreshold swing are 3.8 cm2V-1s-1, 1.72 V, 2.3×106 and 1.56 V/decade, respectively.
    Advisory Committee
  • Ting-Chang Chang - chair
  • Mei-Ying Chang - co-chair
  • Miau-Ju Chuang - co-chair
  • Ann-Kuo Chu - advisor
  • Files
  • etd-0616108-221511.pdf
  • indicate in-campus access in a year and off_campus not accessible
    Date of Submission 2008-06-16

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