Title page for etd-0615113-163433


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URN etd-0615113-163433
Author Jung-Chan Lee
Author's Email Address No Public.
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Department Electrical Engineering
Year 2012
Semester 2
Degree Master
Type of Document
Language English
Title Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides
Date of Defense 2013-07-11
Page Count 136
Keyword
  • InP
  • ALD
  • Schottky tunneling barrier MOSFET
  • TiO2
  • Abstract In this study, the thin titanium oxide (TiO2) film and aluminum oxide (Al2O3) films which was used as gate oxides of InP Schottky tunneling barrier MOSFET were deposited on InP substrate that was prepared by atomic layer deposition (ALD). First, we made of improvement quality for existing titanium oxides, using double stack of titanium oxide (TiO2) and aluminum oxide (Al2O3) by ALD can be used to improve single layer of TiO2. Al2O3 of ALD has self-cleaning which could improve interface quality between oxide and substrate, the leakage current densities can reach 3.1 × 10-9 and 3.3 × 10-7 A/cm2 at ± 2 MV/cm. In order to having good quality of interface, the (NH4)2S solution is a good method to reduce surface native oxide on InP. Therefore, Schottky barrier will not be influenced by Fermi level pinning with fewer native oxide. Otherwise, improvement of drain current and reduction of contact resistance in source/drain regions are our purposes. So, we investigate three structures of Schottky tunneling barrier diodes by inserting dielectrics as source/drain regions. From my experiments can be found the double layers of Al2O3/TiO2 has the highest current which is 7.27 mA/cm2 at reverse bias in these three structures. The current of double layer dielectrics Schottky tunneling barrier diode is higher than general Schottky diode (Al/InP) for five orders. The contact resistance in double dielectrics layers is the lowest in four structures. For the electrical measurements, the transconductance and mobility are 10 mS/mm and 3770 mm2/V-s, respectively. It has low subthreshold swing in ID-VG linear region. Compare Schottky barrier MOSFET and Schottky tunneling barrier MOSFET, the most difference is the contact resistance remarkable reduction and improvement of drain current. Therefore, the transconductance and the mobillty are remarkable improvement.
    Advisory Committee
  • Chen Ying-Chung - chair
  • Da-Ren Hang - co-chair
  • Yeong-Her Wang - co-chair
  • IKai Lo - co-chair
  • Ming-Kwei Lee - advisor
  • Ying-Chung Chen - advisor
  • Files
  • etd-0615113-163433.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2013-07-15

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