||This paper is surrounded by oxygen ions have better adsorption characteristics of indium tin oxide (ITO) and Transition metal gadolinium used in resistive random access memory (RRAM). Discussion RRAM switching mechanism and improve it.|
First, use of multi-target magnetron sputtering system making gadolinium oxide (Gd2O3) films in Gd: SiO2 / TiN and covered Pt with top electrode .And comparison with structure Pt / Gd: SiO2 / TiN. Through measurement in electrical can find that the structure have the buffer layer (Gd2O3) existed limiting effect ,It’s presumably due to Gd’s outer space has higher orbital . And further found that asymmetric voltage operation, will change the resistance and polarity direction. In the phenomenon can emergence of complementary resistive switching characteristics (CRS).
Then used ITO, which has high transparency and good electrical conductivity and has a lot of oxygen vacancies. Caused it to have a good oxygen ion adsorption. This section will be used as sputtering the electrode ITO on Gd: SiO2 / TiN. Compare with buffer layer's device and ITO/Gd: SiO2 / TiN can find ITO/Gd: SiO2 / TiN has effectively reduce power consumption and operating voltage.
Use Current-Voltage Fitting and found that ITO / Gd: SiO2 / TiN 's Reset characteristics operation on Schottky emission. Mainly speculate driven by the oxygen ions in electric field to move and switching resistance .Other case of the multi-stage Set characteristics be use Fast IV measurements and fitting the mechanism , presumably the resistance first through in Gd: SiO2 to ITO , and then drive the dielectric coefficient of oxygen ions in ITO layer .
But after placement more than four months, will find that the measurement of I-V curve are significant instability phenomenon. Therefore, this section leads to use of water vapor, oxygen ,and measurement, and then to clarify the current conduction mechanism, so found that the amount of oxygen will affect the barrier height of it and thereby enabling the current characteristics produce change. In order to improve this phenomenon, Si3N4 protective cover layer can be effectively found good stability .
Finally, to the sample with water vapor thermal annealing processes , the operating current of the devices decrease 10 times after Water vapor RTA. Cause by owing to the introduction of oxygen through defects repairing process by H2O. It is possible to reduce the operating current and power consumption.
In order to make the device to have better development and application, this section will sputter device on type of flexible artificial skin , and found low leakage currents resistance switching characteristics.