Title page for etd-0609114-133231


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URN etd-0609114-133231
Author Zhi-yang Wang
Author's Email Address No Public.
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Department Materials and Optoelectronic Science
Year 2013
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Study on Applications of LiSiOx Thin-Film Resistance Random Access Memory as Synapse in Neuromorphic Systems
Date of Defense 2014-06-11
Page Count 96
Keyword
  • RRAM
  • CRS
  • synaptic plasticity
  • STDP
  • STM
  • LTM
  • analog storage
  • lithium silicate
  • Abstract The information stored in human brain is different from computer, it storages and transmits messages through analog signal instead of digital signal. In this study, the lithium silicate resistive random access memory (RRAM) mimics synaptic-like biological behavior with multi-bit function. It is helpful for the development of artificial neural network and analog storage by emulating learning rules in the brain.
    The lithium silicate thin film was prepared by RF sputtering, and it was fabricated the RRAM with Pt/LiSiOx/TiN structure. Though the electrical analysis, the lithium silicate RRAM shows abnormal resistive switching behaviors, especially the high resistance states distribute in a wide range. Based on the corroboration of conduction current fitting analysis, a model was proposed to explain the electrical resistive switching behaviors.
    By controlling the stop-voltage, the device can achieve multi-bit function and perform complementary resistive switches (CRS). Generally, CRS consists of two anti-serial RRAMs to solve the sneak path problem. However, the lithium silicate RRAM can archive CRS in a single device due to the dual-ion effect (Li+ and O2-).
    The lithium silicate RRAM device is demonstrated advanced synaptic function such as synaptic plasticity, a spike-timing-dependent plasticity (STDP), a short-term memory (STM) and long-term memory function (LTM), which is relying on the synaptic plasticity with a continuous transition between intermediate resistance states. Further, after a constant voltage applying, the irreversible switching from LRS to HRS is recovered, and the device reveals good endurance again.
    Advisory Committee
  • Ting-Chang Chang - chair
  • Chun-Chieh Lin - co-chair
  • Tsung-Ming Tsai - advisor
  • Files
  • etd-0609114-133231.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2014-07-09

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