||With the evolution of modern technology, displays have been an important part in our life and thin film transistor plays a quite crucial role. Metal-oxide thin film transistor has attracted much attention recently since it possesses the advantages of both amorphous and polycrystalline silicon. Metal-oxide has the merits of good electron mobility and uniformity, lower manufacturing cost, and capability of fabricating at room temperature. In this work, amorphous Indium-Gallium-Zinc-Oxide is utilized as active layer of thin film transistor.|
Today, requirements for higher resolution are absolute due to the emergence of retina display products. If the resolution is 1920*1080, TFTs operating can be exerted long-term negative bias while scan line operating in off-state condition. Therefore, in off- state condition and under exposing illumination, the effects from both environment and back lights are worthy of further investigation. Thin film transistors (TFTs) with active layers of InGaZnO4 have attracted much attention in industry for application in display in the next generation because it possesses advantageous properties and it is a wide bandgap material, which can be the potential candidate for transparent thin film transistors. Therefore, illumination effects, including ultra violet irradiation, need to be well investigated.
The electric characteristic degradation caused by negative bias illumination stress (NBIS) for a-InGaZnO4 thin film transistors is studied in this work. We discuss the variety of reliability issues, such as illumination stress、negative bias temperature illumination stress and top gate negative bias illumination stress…etc. Moreover, we also use ISE-TCAD simulation to further verify experimental results and recommend improved ways to produce idea design for displays.