Title page for etd-0528114-221549


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URN etd-0528114-221549
Author BO-HUNG CHOU
Author's Email Address No Public.
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Department Physics
Year 2013
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Topologically electronic properties of tin thin films:a first-principles study
Date of Defense 2014-05-29
Page Count 68
Keyword
  • First-principles calculations
  • Electronic structures
  • Quantum spin Hall effect
  • Tin thin films
  • Topological phase transition
  • 2D topological insulators
  • Abstract We use first-principles electronic structure calculations to predict a new class of two-dimensional (2D) topological insulators (TIs) in hydrogenated ultra-thin tin films. Single bilayer tin film had been identified as a two-dimensional topological insulator and it transforms into a trivial insulator after hydrogenation. Based on our parity analysis, tin films with two and three bilayers are in trivial phase. In addition, hydrogenated tin films with two, three and four bilayers are non-trivial. For the thickness of tin films up to three bilayers, the tin films were altered from metallic to insulating after H-passivations. Finally, the iodine-terminated tin films up to three bilayers were also studied and they all are found to be non-trivial. The systems become semi-metallic beyond single bilayer. Thus, a large gap of 340 meV for single iodine-terminated bilayer can not be replicated in iodine-terminated two- and three-bilayer tin films.
    Advisory Committee
  • Chien-Cheng Kuo - chair
  • Shin-Pon Ju - co-chair
  • Wei-Feng Tsai - co-chair
  • Feng-Chuan Chuang - advisor
  • Files
  • etd-0528114-221549.pdf
  • Indicate in-campus at 2 year and off-campus access at 2 year.
    Date of Submission 2014-06-28

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