Title page for etd-0525115-144535


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URN etd-0525115-144535
Author Tai-te Lin
Author's Email Address No Public.
Statistics This thesis had been viewed 5560 times. Download 438 times.
Department Physics
Year 2014
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Photo-enhanced Electronic Properties at LaAlO3/SrTiO3 Heterointerfaces with Au Nanoclusters
Date of Defense 2015-03-27
Page Count 48
Keyword
  • SrTiO3
  • light illumination
  • scanning tunneling spectroscopy (STS)
  • LaAlO3
  • scanning tunneling microscopy (STM)
  • heterostructures
  • Abstract Complex oxide heterostructures of LaAlO3 (LAO) and SrTiO3 (STO) have drawn a large amount of interest due to its unique physical properties. Many researches have shown that the thickness of LAO should be equal to or greater than the critical value 4 unit cells (u.c.) to make the interface conducting. In other words, the interface of 3u.c. LAO grown on STO is insulating. For application, it is essential to find other methods to control the electronic properties of the interface. With the LAO surface modification by Au nanoclusters, the interfacial two-dimensional electron gas presents a giant optical switching effect under green light illumination. In this study, the results can reveal the evolution of electronic structures in the LAO (3u.c.)/STO model system of the process turning the insulating interface to be conducting by using the technique of cross-sectional scanning tunneling microscopy and spectroscopy. Results clearly reveal the changes in the built-in electric field of the LAO and the band bending in the STO adjacent to the interface with light illumination. The magnitude of the electric field (E) in the LAO is reduced from 23 meVÅ-1 to 9 meVÅ-1. The interfacial band bending (V) at the STO side is 0.39V. The approximate range (λ) at the STO is 1.2 nm.
    Advisory Committee
  • Shiow-Fon Tsay - chair
  • Chien-Cheng Kuo - co-chair
  • Yi-Chun Chen - co-chair
  • Ya-Ping Chiu - advisor
  • Files
  • etd-0525115-144535.pdf
  • Indicate in-campus at 1 year and off-campus access at 1 year.
    Date of Submission 2015-06-26

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