Title page for etd-0524113-023052


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URN etd-0524113-023052
Author Chin-Pin Hsiao
Author's Email Address No Public.
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Department Electro-Optical Engineering
Year 2012
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Light Extraction Efficiency Improvement for GaN LEDs by Hydro-Thermal ZnO nanorods
Date of Defense 2013-06-20
Page Count 88
Keyword
  • Transparent conducting film
  • surface roughness
  • Hydro-thermal
  • ZnO nanorods
  • GaN LED
  • Abstract In the study, we investigated Zinc oxide nanorods by hydro-thermal contact to GaN blue LED and compared with AZO and Ni/Au thin film. Zinc nitrate and Hexamethylenetetramine were used as the deposition precursors.
    We investigated transmission and Hall effect of AZO and Ni/Au transparent conducting film, and applied to the chip process of GaN blue LED. Ni/Au was more good ohmic contact than AZO on P-GaN, but that transmission of AZO was high, thus, light output power of AZO LED was more higher than Ni/Au LED, so that can improve properties of LED.
    In order to further increase the light output power, ZnO nanorods was surface roughness by hydro-thermal on AZO film, that analyed transmission and surface of different concentrate and growth time, and applied to GaN blue LED. The optimum of transmission was 93.71% in 0.04M concentrate of Zinc nitrate and 30minutes of growth time at 454nm.The optimum of light output power was 90 minutes of growth time on ZnO nanorods, that Pattern(2) of light out power was more 126.1% than Pattern(2) of AZO LED at 100mA.
    The escape probability of photons generated in active layer of LED can be enhances by slim, irregularly and roughness of ZnO nanorods. Although, that was bad ohmic contact between AZO film and P-GaN, but the result of ZnO nanorods on AZO can effecticely improve light output power of LED, and thus enhance the light extraction efficiency.
    Advisory Committee
  • Wood-Hi Cheng - chair
  • Jausheng Wang - co-chair
  • Tsong-Sheng Lay - advisor
  • Yung-Jui Chen - advisor
  • Files
  • etd-0524113-023052.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2013-07-12

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